Sign In | Join Free | My chinalane.org
China Wisdtech Technology Co.,Limited logo
Wisdtech Technology Co.,Limited
WisdTech · Electronic product integration service integration manufacturer
Verified Supplier

2 Years
Home > RF Transistors >

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Product Categories
Wisdtech Technology Co.,Limited
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Brand Name : Toshiba

Model Number : 2SA1943-O(Q)

Place of Origin : JP

MOQ : 1pcs

Price : Email us for details

Payment Terms : T/T, Western Union

Supply Ability : 5000

Delivery Time : 1day

Packaging Details : Tray

Description : 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Stock : 2000PCS

Date Code : Newest code

Shipping by : DHL/UPS/Fedex

Condition : New*Original

Warranty : 365days

Lead free : Rohs Compliant

Lead times : Immediately Shipment

Package : TO-3P-3

Mounting Style : Through Hole

Contact Now

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole

Toshiba
Product Category: Bipolar Transistors - BJT
RoHS: Details
Through Hole
TO-3P-3
PNP
Single
230 V
230 V
5 V
1.5 V
15 A
150 W
30 MHz
-
+ 150 C
2SA
Tray
Brand: Toshiba
Continuous Collector Current: - 15 A
DC Collector/Base Gain hfe Min: 55
DC Current Gain hFE Max: 160
Height: 26 mm
Length: 20.5 mm
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 5.2 mm
Unit Weight: 0.238311 oz

Power Amplifier Applications

• High collector voltage: VCEO= −230 V (min)
• Complementary to 2SC5200
• Recommended for 100-W high-fidelity audio frequency amplifier output stage.

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Specifications

  • Manufacturer: Toshiba
  • Transistor Type: NPN
  • Package Type: TO-3PL
  • Maximum Power Dissipation: 150W
  • Collector Emitter Voltage (VCEO): 230V
  • Maximum Collector Current: 15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Frequency: 30MHz
  • Mounting Type: Through Hole
  • Operating Temperature: 150°C TJ
  • Part Status: Obsolete

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)


Wholesale 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from china suppliers

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Wisdtech Technology Co.,Limited
*Subject:
*Message:
Characters Remaining: (0/3000)
 
You May Like